Panasonic and United Microelectronics Corporation have agreed to develop a mass production process for the next generation of ReRAM

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OSAKA, Japan – (COMMERCIAL THREAD) – Panasonic Semiconductor Solutions Co., Ltd. (“PSCS”, Headquarters: Nagaokakyo City, Kyoto Prefecture; Chairman: Kazuhiro Koyama) has entered into an agreement with United Microelectronics Corporation (“UMC”, Headquarters: Hsinchu City, Taiwan, CEO: Po Wen Yen) on the joint development of a mass production process for the next generation of 40nm ReRAM[1].

ReRAM, like flash memory [2] currently widely used, is a type of non-volatile memory[3]. The apparatus has simple structure, high speed processing and low power consumption. PSCS began mass production of ReRAM using a 180nm process in 2013 and currently supplies its MN101LR 8-bit microcomputer series for low power applications such as portable health devices. The company was the first to test and verify the high reliability of 40nm process memory arrays.

The agreed cooperation project will allow the integration of the 40nm ReRAM process technologies developed by PSCS with UMC’s high reliability CMOS process technologies. This will provide a process platform for ReRAM applicable, as embedded memories instead of flash memories, to various system devices such as those widely used in smart cards, portable terminals and IoT devices.

PSCS will ship product samples using the new 40nm process in 2018 and will be the first to launch mass production in the industry. The two companies, PSCS and UMC, will offer the co-developed ReRAM process platform to other semiconductor manufacturers and suppliers around the world.

Regarding this cooperative program, PSCS President Kazuhiro Koyama said, “The company will provide a wide range of optimal products that meet customer needs by developing a scaling process platform that will accelerate the Market adoption of ReRAM, the mass production of which in industry was initiated by PSCS. ”

“We are delighted to enter into this foundry agreement with Panasonic,” said Senior Vice President SC Chien of UMC. “The proven reliability, fast cycle times, and high efficiencies of our 40nm process will bring a new competitive element to Panasonic’s ReRAM, which will translate into mutual benefits for both companies as the product becomes widely available. adopted in the market. We look forward to working with Panasonic to bring their 40nm ReRAM to high volume production. ”

About Panasonic
Panasonic Corporation is a global leader in the development of various electronic technologies and solutions for customers in the consumer electronics, housing, automotive, enterprise solutions and device industries. Since its founding in 1918, the company has grown globally and now operates 474 subsidiaries and 94 associated companies worldwide, with consolidated net sales of 7.553 billion yen for the fiscal year ended. March 31, 2016. Committed to seeking new value through innovation in all divisions, the company uses its technologies to create a better life and a better world for its customers. To learn more about Panasonic: http://www.panasonic.com/global.

About UMC (United Microelectronics Corporation)
UMC is one of the world’s leading semiconductor foundries providing advanced production of integrated circuits for applications spanning all major sectors of the electronics industry. UMC’s 10 wafer manufacturing plants are strategically located across Asia and are capable of producing more than 500,000 wafers per month. The company employs more than 17,000 people worldwide, with offices in Taiwan, Mainland China, Europe, Japan, Korea, Singapore and the United States.
UMC: http://www.umc.com

Terminology

[1]

ReRAM (resistive random access memory)

Non-volatile memory that generates large differences in resistance by applying pulse voltages to thin films of metal oxide to store “0’s” and “1’s”. It has a simple structure which includes metal oxides sandwiched by electrodes which allow a simple manufacturing process, and has outstanding characteristics which include low power consumption and high speed rewrite.

[2]

Flash memory

Non-volatile memory that can be electrically erased and rewritten.

[3]

Non-volatile memory

Solid-state memory that retains data even without power.


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